Highly strained Si epilayers grown on SiGe/Si(100) virtual substrate by reduced pressure chemical vapour deposition.

Details

Language :

English

ISSN :

18626351

Volume :

8

Issue :

3

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

59226102

Full Text :

https://doi.org/10.1002/pssc.201000255