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Electrostatics of Ultimately Thin-Body Tunneling FET Using Graphene Nanoribbon.
- Source :
- IEEE Electron Device Letters; 04/01/2011, Vol. 32 Issue 4, p431-433, 3p
- Publication Year :
- 2011
-
Abstract
- The effect of 2-D electrostatic environment on the device performance of ultimately thin-body tunneling field-effect transistors (UTB-TFETs) using graphene nanoribbons (GNRs) is investigated by varying the gate-oxide thickness and insulating material with different dielectric constants (k). Compared to Si TFETs with different body thicknesses, the atomic-layer-thick structure enhances the lateral fringing fields at the source–channel interface, resulting in a lower on-state current in GNR TFETs with high-k oxide as compared to the low-k variant of the same thickness. Low- k spacers are therefore essential to counter this effect and reap the benefits of high-k dielectrics in improving the device performance of UTB-TFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 32
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 59469939
- Full Text :
- https://doi.org/10.1109/LED.2010.2103372