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TiNx/HfO2 interface dipole induced by oxygen scavenging.
- Source :
- Applied Physics Letters; 3/28/2011, Vol. 98 Issue 13, p132901, 3p, 4 Graphs
- Publication Year :
- 2011
-
Abstract
- Electron barrier height measurements at TiN<subscript>x</subscript>/HfO<subscript>2</subscript> interfaces in metal-insulator-metal structures using internal photoemission of electrons reveal a significant (≈1 eV, i.e., about 1/3 of the total barrier height) influence of the opposite electrode material, i.e., Hf versus TiN<subscript>x</subscript>. This effect is suggested to be caused by oxygen scavenging from HfO<subscript>2</subscript> by the opposite Hf electrode resulting in generation of positive charges in the oxide above the metal electrode surfaces. Such a considerable interface dipole component demonstrates a principle that may be used to tune the barrier. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 98
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 59744658
- Full Text :
- https://doi.org/10.1063/1.3570647