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Effects of EUV Irradiation on Poly-Si SONOS NVM Devices.

Authors :
Tsui, Bing-Yue
Yen, Chih-Chan
Li, Po-Hsueh
Lai, Jui-Yao
Source :
IEEE Electron Device Letters; 05/01/2011, Vol. 32 Issue 5, p614-616, 3p
Publication Year :
2011

Abstract

The effects of extreme-ultraviolet (EUV)-irradiation-induced damage on the characteristics of a silicon–oxide–nitride–oxide–silicon (SONOS) memory device are investigated. After EUV irradiation, changes in the memory window and program/erase speed indicate the generation of positive charges and new traps. Retention performance degrades after high-dose irradiation, which indicates that the tunneling layer is damaged. Endurance performance degrades severely because the damage in the blocking oxide results in serious electron back injection after cycling operations. These defects cannot be recovered after 600 ^\circ\C annealing. It is recommended that in-process high-dose EUV irradiation on a SONOS stack after a front-end-of-line process should be avoided. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
32
Issue :
5
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
60387034
Full Text :
https://doi.org/10.1109/LED.2011.2121052