GaAs/AlGaAs quantum wires fabricated by SiO2 capping-induced intermixing.

We demonstrate that selective intermixing of GaAs/AlGaAs quantum well heterostructures induced by SiO2 capping and subsequent annealing can be spatially localized on a length scale compatible with the lateral confinement of carriers into quantum wires. Low temperature optical spectroscopy measurements including linear polarization anisotropy analysis show evidence of the formation of one-dimensional subbands. A mechanism involving the ability of the thermal stress field generated in the heterostructure by the patterned SiO2 film to pilot the diffusion of the excess Ga vacancies, which are responsible for the enhanced interdiffusion under SiO2 is suggested to account for the high lateral selectivity achievable with this novel process. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR]