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CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films.
- Source :
- Chinese Physics Letters; Jul2011, Vol. 28 Issue 7, p077201-077201, 1p
- Publication Year :
- 2011
-
Abstract
- We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield ([?]100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 28
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 63249250
- Full Text :
- https://doi.org/10.1088/0256-307X/28/7/077201