Cite
Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge.
MLA
Fukuda, Yukio, et al. “Effects of Postdeposition Annealing Ambient on Hysteresis in an Al2O3/GeO2 Gate-Dielectric Stack on Ge.” Journal of Applied Physics, vol. 110, no. 2, July 2011, p. 026108. EBSCOhost, https://doi.org/10.1063/1.3610796.
APA
Fukuda, Y., Otani, Y., Sato, T., Toyota, H., & Ono, T. (2011). Effects of postdeposition annealing ambient on hysteresis in an Al2O3/GeO2 gate-dielectric stack on Ge. Journal of Applied Physics, 110(2), 026108. https://doi.org/10.1063/1.3610796
Chicago
Fukuda, Yukio, Yohei Otani, Tetsuya Sato, Hiroshi Toyota, and Toshiro Ono. 2011. “Effects of Postdeposition Annealing Ambient on Hysteresis in an Al2O3/GeO2 Gate-Dielectric Stack on Ge.” Journal of Applied Physics 110 (2): 026108. doi:10.1063/1.3610796.