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High efficiency nanosecond generator based on semiconductor opening switch.

Authors :
Lyubutin, S.
Pedos, M.
Ponomarev, A.V.
Rukin, S.
Slovikovsky, B.
Tsyranov, S.
Vasiliev, P.
Source :
IEEE Transactions on Dielectrics & Electrical Insulation; Aug2011, Vol. 18 Issue 4, p1221-1227, 0p
Publication Year :
2011

Abstract

On the base of novel circuitry approach a SOS-based (Semiconductor Opening Switch) all-solid-state repetitive generator has been developed for various technological and industrial applications. The generator is equipped with a circuit for recuperation of unused energy reflected back from the magnetic compressor. The SOS is pumped in a novel pumping regime that includes microsecond forward pumping and current pause before fast reverse pumping process. As a result, the total efficiency of the generator has been increased from usual value of around 40% up to 60-62%. The generator has the following output specifications: peak voltage is up to 60 kV; peak current is up to 6 kA; FWHM is around 40 to 50 ns; pulse repetition frequency in continuous mode is up to 1 kHz; output average power in matched load is up to 9 kW. Electrical circuit diagrams and principle of the generator operation as well as experimental and testing results obtained are described. The results of numerical simulation of the SOS diode operation are presented also. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10709878
Volume :
18
Issue :
4
Database :
Complementary Index
Journal :
IEEE Transactions on Dielectrics & Electrical Insulation
Publication Type :
Academic Journal
Accession number :
64315614
Full Text :
https://doi.org/10.1109/TDEI.2011.5976119