Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down.

Details

Language :

English

ISSN :

18626351

Volume :

6

Issue :

2

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64959521

Full Text :

https://doi.org/10.1002/pssc.200880401