Correlation between growth pits, optical and structural properties of AlGaN/GaN high-electron-mobility transistors on 4″ silicon substrate.

Details

Language :

English

ISSN :

18626351

Volume :

7

Issue :

7/8

Database :

Complementary Index

Journal :

Physica Status Solidi (C)

Publication Type :

Academic Journal

Accession number :

64960576

Full Text :

https://doi.org/10.1002/pssc.200983468