RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability.

MLA

Dell, John M., et al. “RIE-Induced n-on-p Junction HgCdTe Photodiodes: Effects of Passivant Technology on Bake Stability.” Proceedings of SPIE, no. 1, Nov. 2001, pp. 106–15. EBSCOhost, https://doi.org/10.1117/12.448166.

APA

Dell, J. M., Antoszewski, J., White, J. K., Pal, R., Nguyen, T., Musca, C. A., & Faraone, L. (2001). RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability. Proceedings of SPIE, 1, 106–115. https://doi.org/10.1117/12.448166

Chicago

Dell, John M., Jarek Antoszewski, J. K. White, Ravindra Pal, Thuyen Nguyen, Charles A. Musca, and Lorenzo Faraone. 2001. “RIE-Induced n-on-p Junction HgCdTe Photodiodes: Effects of Passivant Technology on Bake Stability.” Proceedings of SPIE, no. 1 (November): 106–15. doi:10.1117/12.448166.