Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy.

MLA

Zhang, Dao Hua, et al. “Characterization of Si-Doped GaInAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy.” Proceedings of SPIE, no. 1, Nov. 2000, pp. 14–19. EBSCOhost, https://doi.org/10.1117/12.405385.

APA

Zhang, D. H., Wang, X. Z., Zheng, H. Q., Yoon, S. F., & Kam, C. H. (2000). Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy. Proceedings of SPIE, 1, 14–19. https://doi.org/10.1117/12.405385

Chicago

Zhang, Dao Hua, X. Z. Wang, Hai Qun Zheng, Soon Fatt Yoon, and Chan Hin Kam. 2000. “Characterization of Si-Doped GaInAsP/GaAs Grown by Solid Source Molecular Beam Epitaxy.” Proceedings of SPIE, no. 1 (November): 14–19. doi:10.1117/12.405385.