Alternating PSM for sub-60-nm DRAM gate single exposure.

MLA

Chen, Kunyuan, et al. “Alternating PSM for Sub-60-Nm DRAM Gate Single Exposure.” Proceedings of SPIE, no. 1, Nov. 2006, p. 63491T–63491T–4. EBSCOhost, https://doi.org/10.1117/12.685295.

APA

Chen, K., Lu, R., Fu, K. K., Hsia, C., Shih, C.-L., & Lin, J. (2006). Alternating PSM for sub-60-nm DRAM gate single exposure. Proceedings of SPIE, 1, 63491T–63491T–4. https://doi.org/10.1117/12.685295

Chicago

Chen, Kunyuan, Richard Lu, Kuo Kuei Fu, ChungPing Hsia, Chiang-Lin Shih, and JengPing Lin. 2006. “Alternating PSM for Sub-60-Nm DRAM Gate Single Exposure.” Proceedings of SPIE, no. 1 (November): 63491T–63491T–4. doi:10.1117/12.685295.