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Organic Pseudo-CMOS Circuits for Low-Voltage Large-Gain High-Speed Operation.
- Source :
- IEEE Electron Device Letters; Oct2011, Vol. 32 Issue 10, p1448-1450, 3p
- Publication Year :
- 2011
-
Abstract
- Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 \mu\s of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 32
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 65933508
- Full Text :
- https://doi.org/10.1109/LED.2011.2161747