Back to Search Start Over

Organic Pseudo-CMOS Circuits for Low-Voltage Large-Gain High-Speed Operation.

Authors :
Fukuda, Kenjiro
Sekitani, Tsuyoshi
Yokota, Tomoyuki
Kuribara, Kazunori
Huang, Tsung-Ching
Sakurai, Takayasu
Zschieschang, Ute
Klauk, Hagen
Ikeda, Masaaki
Kuwabara, Hirokazu
Yamamoto, Tatsuya
Takimiya, Kazuo
Cheng, Kwang-Ting
Someya, Takao
Source :
IEEE Electron Device Letters; Oct2011, Vol. 32 Issue 10, p1448-1450, 3p
Publication Year :
2011

Abstract

Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 \mu\s of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07413106
Volume :
32
Issue :
10
Database :
Complementary Index
Journal :
IEEE Electron Device Letters
Publication Type :
Academic Journal
Accession number :
65933508
Full Text :
https://doi.org/10.1109/LED.2011.2161747