Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma.

MLA

Hayakawa, Ryoma, et al. “Structural Analysis and Electrical Properties of Pure Ge3N4 Dielectric Layers Formed by an Atmospheric-Pressure Nitrogen Plasma.” Journal of Applied Physics, vol. 110, no. 6, Sept. 2011, p. 064103. EBSCOhost, https://doi.org/10.1063/1.3638133.

APA

Hayakawa, R., Yoshida, M., Ide, K., Yamashita, Y., Yoshikawa, H., Kobayashi, K., Kunugi, S., Uehara, T., & Fujimura, N. (2011). Structural analysis and electrical properties of pure Ge3N4 dielectric layers formed by an atmospheric-pressure nitrogen plasma. Journal of Applied Physics, 110(6), 064103. https://doi.org/10.1063/1.3638133

Chicago

Hayakawa, Ryoma, Masashi Yoshida, Kouta Ide, Yoshiyuki Yamashita, Hideki Yoshikawa, Keisuke Kobayashi, Shunsuke Kunugi, Tsuyoshi Uehara, and Norifumi Fujimura. 2011. “Structural Analysis and Electrical Properties of Pure Ge3N4 Dielectric Layers Formed by an Atmospheric-Pressure Nitrogen Plasma.” Journal of Applied Physics 110 (6): 064103. doi:10.1063/1.3638133.