Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics.

MLA

Min Li, et al. “Gate Bias Stress Stability under Light Irradiation for Indium Zinc Oxide Thin-Film Transistors Based on Anodic Aluminium Oxide Gate Dielectrics.” Journal of Physics D: Applied Physics, vol. 44, no. 45, Nov. 2011, p. 455102. EBSCOhost, https://doi.org/10.1088/0022-3727/44/45/455102.

APA

Min Li, Linfeng Lan, Miao Xu, Lei Wang, Hua Xu, Dongxiang Luo, Jianhua Zou, Hong Tao, Rihui Yao, & Junbiao Peng. (2011). Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics. Journal of Physics D: Applied Physics, 44(45), 455102. https://doi.org/10.1088/0022-3727/44/45/455102

Chicago

Min Li, Linfeng Lan, Miao Xu, Lei Wang, Hua Xu, Dongxiang Luo, Jianhua Zou, Hong Tao, Rihui Yao, and Junbiao Peng. 2011. “Gate Bias Stress Stability under Light Irradiation for Indium Zinc Oxide Thin-Film Transistors Based on Anodic Aluminium Oxide Gate Dielectrics.” Journal of Physics D: Applied Physics 44 (45): 455102. doi:10.1088/0022-3727/44/45/455102.