PERFORMANCE ANALYSIS OF CMOS FOR HIGH SPEED MIXED SIGNAL CIRCUITS.

The objective of this paper is to discuss the opportunities of an advanced RFCMOS for millimeter-wave applications based on an assessment of figures of merits including relevant device information. This paper introduces the RF specifications for 45 nm CMOS node and present the evolution of RF-FOMs with gate downscaling over the previous generations. Especially, since 45 nm CMOS is the technology to be available in production, a particular focus on its RF performance for power and bandwidth is given. [ABSTRACT FROM AUTHOR]