Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires.

MLA

Paul, Abhijeet, et al. “Influence of Cross-Section Geometry and Wire Orientation on the Phonon Shifts in Ultra-Scaled Si Nanowires.” Journal of Applied Physics, vol. 110, no. 9, Nov. 2011, p. 094308. EBSCOhost, https://doi.org/10.1063/1.3656687.

APA

Paul, A., Luisier, M., & Klimeck, G. (2011). Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires. Journal of Applied Physics, 110(9), 094308. https://doi.org/10.1063/1.3656687

Chicago

Paul, Abhijeet, Mathieu Luisier, and Gerhard Klimeck. 2011. “Influence of Cross-Section Geometry and Wire Orientation on the Phonon Shifts in Ultra-Scaled Si Nanowires.” Journal of Applied Physics 110 (9): 094308. doi:10.1063/1.3656687.