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Nonlinear Steady-State III–V FET Model for Microwave Antenna Switch Applications.
- Source :
- IEEE Transactions on Electron Devices; Dec2011, Vol. 58 Issue 12, p4301-4308, 8p
- Publication Year :
- 2011
-
Abstract
- A nonlinear III–V field-effect transistor model is proposed for designing microwave antenna switches and related circuits. off-state gate and drain capacitance values of a pseudomorphic high-electron-mobility transistor (HEMT) derived from pulsed S-parameters with a deep off-state quiescent gate voltage are found to be much less voltage dependent than capacitance values measured by a nonpulsed bias owing to trap-induced dispersion effects. Our device model based on pulsed-bias CV characteristics accurately simulates switch nonlinearity. Both gate and drain capacitance values are assumed to be nonlinear, and a charge expression is developed for model implementation. For both capacitance values, a nonpulsed-bias CV curve is also utilized to maintain accurate capacitance at the quiescent voltage and, thus, accurate simulation of off-switch isolation. Additional terms are introduced to an existing drain current model to improve accuracy at high Vgs/\low\ Vds and subthreshold regions. Furthermore, the model is extended to multiple-gate devices. Harmonics generated from both off- and on -state switches, insertion loss, and isolation are accurately predicted for both single- and multiple-gate HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 58
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 67487907
- Full Text :
- https://doi.org/10.1109/TED.2011.2169415