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Localized charge trapping and lateral charge diffusion in metal nanocrystal-embedded High-κ/SiO2 gate stack.
- Source :
- Applied Physics Letters; 11/28/2011, Vol. 99 Issue 22, p222102, 3p, 1 Black and White Photograph, 3 Graphs
- Publication Year :
- 2011
-
Abstract
- In this work, we demonstrate a two-step analysis procedure that enables an in-depth understanding of the localized charge trapping and charge decay mechanisms in metal nanocrystal (MNC)-embedded high-κ/SiO2 gate stacks. The results clearly reveal that vertical charge loss and lateral charge diffusion are two competing mechanisms, and they can be identified by discharging current measurements at elevated temperatures and the Kelvin force microscopy characterization. It is found that the MNC with higher work function has a lower inter-dot charge tunneling probability, which is favorable for improved retention in memory applications. However, the vertical charge loss during the initial decay period is a trade-off and it could be minimized by using a dual-layer MNC structure. [ABSTRACT FROM AUTHOR]
- Subjects :
- NANOCRYSTALS
ELECTRIC charge
METALS
DIFFUSION
PHYSICS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 67652668
- Full Text :
- https://doi.org/10.1063/1.3664220