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Thermal exchange bias field drifts after 10 keV He ion bombardment: Storage temperature dependence and initial number of coupling sites.
- Source :
- Journal of Applied Physics; Dec2011, Vol. 110 Issue 11, p113911, 4p, 1 Chart, 4 Graphs
- Publication Year :
- 2011
-
Abstract
- Sputter deposited Mn83Ir17(30 nm)/Co70Fe30(10 nm)/Ta thin films have been investigated for their thermal exchange bias field drift at different storage temperatures after 10 keV He+ ion bombardment in an externally applied in-plane magnetic field. It is experimentally shown that the drift coefficient in an intermediate time interval, as given in a recently developed model, is proportional to T and proportional to the initial number of coupling sites in the polycrystalline exchange bias layer system used. [ABSTRACT FROM AUTHOR]
- Subjects :
- HELIUM
THIN films
SPUTTERING (Physics)
ION bombardment
MAGNETIC fields
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 110
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 69702927
- Full Text :
- https://doi.org/10.1063/1.3665198