Characteristics of InGaP/InGaAs MOS-PHEMT with Liquid Phase-Oxidized GaAs Gate Dielectric.

Details

Language :

English

ISSN :

00134651

Volume :

158

Issue :

12

Database :

Complementary Index

Journal :

Journal of The Electrochemical Society

Publication Type :

Academic Journal

Accession number :

69727286

Full Text :

https://doi.org/10.1149/2.048112jes