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Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment.
- Source :
- Applied Physics Letters; 9/19/2011, Vol. 99 Issue 12, p123506, 3p, 1 Chart, 4 Graphs
- Publication Year :
- 2011
-
Abstract
- Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 99
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 70945956
- Full Text :
- https://doi.org/10.1063/1.3641899