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Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °C.
- Source :
- Applied Physics Letters; 1980, Vol. 36 Issue 2, p163-165, 3p
- Publication Year :
- 1980
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 36
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71383319
- Full Text :
- https://doi.org/10.1063/1.91416