Interface analysis by spectroscopic ellipsometry of Ga1-xAlxAs-GaAs heterojunctions grown by metal organic vapor phase epitaxy.

Details

Language :

English

ISSN :

00036951

Volume :

43

Issue :

3

Database :

Complementary Index

Journal :

Applied Physics Letters

Publication Type :

Academic Journal

Accession number :

71388729

Full Text :

https://doi.org/10.1063/1.94328