Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si.

MLA

Dietz, N., et al. “Real-Time Optical Monitoring of Epitaxial Growth: Pulsed Chemical Beam Epitaxy of GaP and InP Homoepitaxy and Heteroepitaxy on Si.” Journal of Electronic Materials, vol. 24, no. 11, Nov. 1995, pp. 1571–76. EBSCOhost, https://doi.org/10.1007/BF02676813.

APA

Dietz, N., Rossow, U., Aspnes, D., & Bachmann, K. (1995). Real-time optical monitoring of epitaxial growth: Pulsed chemical beam epitaxy of GaP and InP homoepitaxy and heteroepitaxy on Si. Journal of Electronic Materials, 24(11), 1571–1576. https://doi.org/10.1007/BF02676813

Chicago

Dietz, N., U. Rossow, D. Aspnes, and K. Bachmann. 1995. “Real-Time Optical Monitoring of Epitaxial Growth: Pulsed Chemical Beam Epitaxy of GaP and InP Homoepitaxy and Heteroepitaxy on Si.” Journal of Electronic Materials 24 (11): 1571–76. doi:10.1007/BF02676813.