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Deep trap levels of ion-implanted germanium in silicon measured by Schottky contact techniques.
- Source :
- Applied Physics Letters; Jul1973, Vol. 23 Issue 1, p31-33, 3p
- Publication Year :
- 1973
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 23
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 71735025
- Full Text :
- https://doi.org/10.1063/1.1654725