Low-noise millimeter-wave mixer diodes prepared by molecular beam epitaxy (MBE).

MLA

Schneider, M. V., et al. “Low-Noise Millimeter-Wave Mixer Diodes Prepared by Molecular Beam Epitaxy (MBE).” Applied Physics Letters, vol. 31, no. 3, Aug. 1977, pp. 219–21. EBSCOhost, https://doi.org/10.1063/1.89613.

APA

Schneider, M. V., Linke, R. A., & Cho, A. Y. (1977). Low-noise millimeter-wave mixer diodes prepared by molecular beam epitaxy (MBE). Applied Physics Letters, 31(3), 219–221. https://doi.org/10.1063/1.89613

Chicago

Schneider, M. V., R. A. Linke, and A. Y. Cho. 1977. “Low-Noise Millimeter-Wave Mixer Diodes Prepared by Molecular Beam Epitaxy (MBE).” Applied Physics Letters 31 (3): 219–21. doi:10.1063/1.89613.