Electrical characteristics of laser-annealed silicon diodes.

Electrical measurements, performed on As-implanted and laser-annealed silicon diodes, have shown poor I-V characteristics with high values of the recombination current and anomalous C-V characteristics. This behavior is attributed to the existence of defects, created during the ion-implantation process, that can not been annealed by the laser treatment. A best improve in the electrical characteristics is obtained after a post-laser annealing in furnace at 600 °C, however the defects are not completely removed. [ABSTRACT FROM AUTHOR]