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Electrical properties and photoluminescence of Te-doped GaAs grown by molecular beam epitaxy.
- Source :
- Journal of Applied Physics; Feb1982, Vol. 53 Issue 2, p999-1006, 8p
- Publication Year :
- 1982
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 53
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 72897886
- Full Text :
- https://doi.org/10.1063/1.330581