GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics.

Authors :: Solov’ev, V. A.
Toropov, A. A.
Meltser, B. Ya.
Terent’ev, Ya. A.
Kyutt, R. N.
Sitnikova, A. A.
Semenov, A. N.
Ivanov, S. V.
Motlan
Goldys, E. M.
Kop’ev, P. S.
Source :: Semiconductors; Jul2002, Vol. 36 Issue 7, p816, 5p
Publication Year :: 2002
Abstract: Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures with selfassembled quantum dots, GaAs layers in GaAs/GaSb structures are subject to elastic tensile stresses due to 7% lattice mismatch. The structures exhibit intense photoluminescence in the 2 µm region at low temperatures. Quantum-dimensional islands are formed in the structure at a nominal GaAs layer thickness exceeding 1.5 monolayers. The band alignment of the structures is of type II. [ABSTRACT FROM AUTHOR]