Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: Ga[sub x]In[sub 1-x]P[sub y]As[sub 1-y].

A thermodynamic description of the molecular-beam epitaxial growth of quaternary III-V compounds with two group-V elements is proposed. A thermodynamic analysis of the growth of the compounds Ga[sub x]In[sub 1-x]P[sub y]As[sub 1-y] and GaP[sub y]As[sub 1-y] is carried out on the basis of the proposed method. [ABSTRACT FROM AUTHOR]