GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy.

MLA

Egorov, A.Yu., et al. “GaAsN/GaAs and InGaAsN/GaAs Heterostructures Grown by Molecular Beam Epitaxy.” Technical Physics Letters, vol. 24, no. 12, Dec. 1998, p. 942. EBSCOhost, https://doi.org/10.1134/1.1262326.

APA

Egorov, A. Y., Zhukov, A. E., Kovsh, A. R., Ustinov, V. M., Mamutin, V. V., Ivanov, S. V., Zhmerik, V. N., Tsatsul, nikov, A. F., Bedarev, D. A., & Kop, ev, P. S. (1998). GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy. Technical Physics Letters, 24(12), 942. https://doi.org/10.1134/1.1262326

Chicago

Egorov, A. Yu., A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, V. V. Mamutin, S. V. Ivanov, V. N. Zhmerik, nikov, A. F. Tsatsul, D. A. Bedarev, and ev, P. S. Kop. 1998. “GaAsN/GaAs and InGaAsN/GaAs Heterostructures Grown by Molecular Beam Epitaxy.” Technical Physics Letters 24 (12): 942. doi:10.1134/1.1262326.