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Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs.
- Source :
- IEEE Electron Device Letters; Mar2012, Vol. 33 Issue 3, p354-356, 3p
- Publication Year :
- 2012
-
Abstract
- In this letter, enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated based on lateral scaling of the 2-D electron gas channel using nanochannel array (NCA) structure. The NCA structure consists of multiple parallel channels with nanoscale width defined by electron-beam lithography and dry etching. Because of the improved gate control from the channel sidewalls and partially relaxed piezoelectric polarization, the fabricated 2 \mu\m-gate-length NCA-HEMT with a nanochannel width of 64 nm showed a threshold voltage of +0.6 V and a higher extrinsic transconductance of 123 mS/mm, compared to -1.6 V and 106 mS/mm for the conventional HEMT with \mu \m-scale channel width. The scaling of threshold voltages, peak transconductance, and gate leakage as a function of the nanochannel width were investigated. Small-signal RF performance of NCA-HEMTs were characterized for the first time and compared with those of conventional HEMTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 33
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 73603808
- Full Text :
- https://doi.org/10.1109/LED.2011.2179003