Cite
On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy.
MLA
Yu, Shimeng, et al. “On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy.” IEEE Transactions on Electron Devices, vol. 59, no. 4, Apr. 2012, pp. 1183–88. EBSCOhost, https://doi.org/10.1109/TED.2012.2184544.
APA
Yu, S., Guan, X., & Wong, H.-S. P. (2012). On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy. IEEE Transactions on Electron Devices, 59(4), 1183–1188. https://doi.org/10.1109/TED.2012.2184544
Chicago
Yu, Shimeng, Ximeng Guan, and H.-S. Philip Wong. 2012. “On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy.” IEEE Transactions on Electron Devices 59 (4): 1183–88. doi:10.1109/TED.2012.2184544.