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Influence of oxide hard mask on profiles of sub-100 nm Si and SiGe gates.

Authors :
Shamiryan, Denis
Paraschiv, Vasile
Locorotondo, Sabrina
Beckx, Stephan
Boullart, Werner
Vanhaelemeersch, Serge
Source :
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2005, Vol. 23 Issue 5, p2194-2197, 4p
Publication Year :
2005

Details

Language :
English
ISSN :
10711023
Volume :
23
Issue :
5
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
Publication Type :
Academic Journal
Accession number :
74323275
Full Text :
https://doi.org/10.1116/1.2019386