Abrupt transitions in composition and doping profile in GaAs-Ga1-xAlxAs heterostructures by atmospheric pressure MOVPE.

Details

Language :

English

ISSN :

0734211X

Volume :

1

Issue :

2

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena

Publication Type :

Academic Journal

Accession number :

74324032

Full Text :

https://doi.org/10.1116/1.582552