Factors affecting the growth of an integrated Ga1-xInxAs/InP PIN-FET by molecular beam epitaxy.

Details

Language :

English

ISSN :

0734211X

Volume :

3

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena

Publication Type :

Academic Journal

Accession number :

74324623

Full Text :

https://doi.org/10.1116/1.583109