Back to Search
Start Over
Investigation of surface roughness of molecular beam epitaxy Ga1-xAlxAs layers and its consequences on GaAs/Ga1-xAlxAs heterostructures.
- Source :
- Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1985, Vol. 3 Issue 4, p950-955, 6p
- Publication Year :
- 1985
Details
- Language :
- English
- ISSN :
- 0734211X
- Volume :
- 3
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena
- Publication Type :
- Academic Journal
- Accession number :
- 74324655
- Full Text :
- https://doi.org/10.1116/1.583020