Cite
A high accuracy and high throughput electron beam reticle writing system for 16M dynamic random access memory class and beyond devices.
MLA
Takigawa, T., et al. “A High Accuracy and High Throughput Electron Beam Reticle Writing System for 16M Dynamic Random Access Memory Class and beyond Devices.” Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena, vol. 8, no. 6, Nov. 1990, pp. 1877–81. EBSCOhost, https://doi.org/10.1116/1.585177.
APA
Takigawa, T., Ogawa, Y., Yoshikawa, R., Koyama, K., Tamamushi, S., Ikenaga, O., Abe, T., Hattori, K., Nishimura, E., Kusakabe, H., Wada, H., Nishino, H., Anze, H., Goto, M., Shigemitsu, F., Munakata, M., Shimazaki, K., Watanabe, S., Saito, T., & Ilo, T. (1990). A high accuracy and high throughput electron beam reticle writing system for 16M dynamic random access memory class and beyond devices. Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena, 8(6), 1877–1881. https://doi.org/10.1116/1.585177
Chicago
Takigawa, T., Y. Ogawa, R. Yoshikawa, K. Koyama, S. Tamamushi, O. Ikenaga, T. Abe, et al. 1990. “A High Accuracy and High Throughput Electron Beam Reticle Writing System for 16M Dynamic Random Access Memory Class and beyond Devices.” Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena 8 (6): 1877–81. doi:10.1116/1.585177.