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Thermal stability and hydrogen atom induced etching of nanometer-thick a-Si:H films grown by ion-beam deposition on Si(100) surfaces.
- Source :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 2003, Vol. 21 Issue 4, p831-837, 7p
- Publication Year :
- 2003
Details
- Language :
- English
- ISSN :
- 07342101
- Volume :
- 21
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
- Publication Type :
- Academic Journal
- Accession number :
- 74337340
- Full Text :
- https://doi.org/10.1116/1.1575213