Selectively dry gate recessed GaAs metal-semiconductor field-effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits.

MLA

Cameron, N. I., et al. “Selectively Dry Gate Recessed GaAs Metal-Semiconductor Field-Effect Transistors, High Electron Mobility Transistors, and Monolithic Microwave Integrated Circuits.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 11, no. 6, Nov. 1993, pp. 2244–48. EBSCOhost, https://doi.org/10.1116/1.586465.

APA

Cameron, N. I., Ferguson, S., Taylor, M. R. S., Beaumont, S. P., Holland, M., Tronche, C., Soulard, M., & Ladbrooke, P. H. (1993). Selectively dry gate recessed GaAs metal-semiconductor field-effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 11(6), 2244–2248. https://doi.org/10.1116/1.586465

Chicago

Cameron, N. I., S. Ferguson, M. R. S. Taylor, S. P. Beaumont, M. Holland, C. Tronche, M. Soulard, and P. H. Ladbrooke. 1993. “Selectively Dry Gate Recessed GaAs Metal-Semiconductor Field-Effect Transistors, High Electron Mobility Transistors, and Monolithic Microwave Integrated Circuits.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 11 (6): 2244–48. doi:10.1116/1.586465.