Fabrication of 0.2 μm large scale integrated circuits using synchrotron radiation x-ray lithography.

MLA

Deguchi, K., et al. “Fabrication of 0.2 Μm Large Scale Integrated Circuits Using Synchrotron Radiation x-Ray Lithography.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 13, no. 6, Nov. 1995, pp. 3040–45. EBSCOhost, https://doi.org/10.1116/1.588318.

APA

Deguchi, K., Miyoshi, K., Ban, H., Matsuda, T., Ohno, T., & Kado, Y. (1995). Fabrication of 0.2 μm large scale integrated circuits using synchrotron radiation x-ray lithography. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 13(6), 3040–3045. https://doi.org/10.1116/1.588318

Chicago

Deguchi, K., K. Miyoshi, H. Ban, T. Matsuda, T. Ohno, and Y. Kado. 1995. “Fabrication of 0.2 Μm Large Scale Integrated Circuits Using Synchrotron Radiation x-Ray Lithography.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 13 (6): 3040–45. doi:10.1116/1.588318.