Cite
Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth.
MLA
Micovic, M., et al. “Fabrication of Heterojunction Bipolar Transistors with Buried Subcollector Layers for Reduction of Base-Collector Capacitance by Molecular Beam Epitaxy Regrowth.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 16, no. 3, May 1998, pp. 962–67. EBSCOhost, https://doi.org/10.1116/1.590231.
APA
Micovic, M., Nordquist, C. D., Lubyshev, D., Mayer, T. S., Miller, D. L., Streater, R. W., & SpringThorpe, A. J. (1998). Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 16(3), 962–967. https://doi.org/10.1116/1.590231
Chicago
Micovic, M., C. D. Nordquist, D. Lubyshev, T. S. Mayer, D. L. Miller, R. W. Streater, and A. J. SpringThorpe. 1998. “Fabrication of Heterojunction Bipolar Transistors with Buried Subcollector Layers for Reduction of Base-Collector Capacitance by Molecular Beam Epitaxy Regrowth.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 16 (3): 962–67. doi:10.1116/1.590231.