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Thermal stability and etching characteristics of electron beam deposited SiO and SiO2.

Authors :
LaRoche, J. R.
Ren, F.
Lothian, R.
Hong, J.
Pearton, S. J.
Lambers, E.
Hsu, C. H.
Wu, C. S.
Hoppe, M.
Source :
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 1, p283-287, 5p
Publication Year :
2000

Details

Language :
English
ISSN :
10711023
Volume :
18
Issue :
1
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
Publication Type :
Academic Journal
Accession number :
74344176
Full Text :
https://doi.org/10.1116/1.591184