Effect of the first antimony layer on AuZn ohmic contacts to p-type InP.

MLA

Yamaguchi, Akira, et al. “Effect of the First Antimony Layer on AuZn Ohmic Contacts to P-Type InP.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 18, no. 4, July 2000, pp. 1957–61. EBSCOhost, https://doi.org/10.1116/1.1305290.

APA

Yamaguchi, A., Asamizu, H., Okada, T., Iguchi, Y., Saitoh, T., Koide, Y., & Murakami, M. (2000). Effect of the first antimony layer on AuZn ohmic contacts to p-type InP. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 18(4), 1957–1961. https://doi.org/10.1116/1.1305290

Chicago

Yamaguchi, Akira, Hirokuni Asamizu, Takeshi Okada, Yasuhiro Iguchi, Tadashi Saitoh, Yasuo Koide, and Masanori Murakami. 2000. “Effect of the First Antimony Layer on AuZn Ohmic Contacts to P-Type InP.” Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 18 (4): 1957–61. doi:10.1116/1.1305290.