CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon.

We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors. The process starts from a 150-mm GaN-on-Si substrate with an embedded \Si3\N4\/ \Al2\O3 bilayer gate dielectric, encapsulated by a high-temperature low-pressure chemical vapor deposited nitride layer. Power devices with a 20-mm gate width reach a maximum output current of 8 A, a breakdown voltage of 750 V, and a specific on-resistance Ron, sp of 2.9 \m\Omega\cdot\cm^2. The off-state drain leakage at 600 V is 7 \mu\A. We show robust gate dielectrics with a large gate bias swing. [ABSTRACT FROM PUBLISHER]