Growth of (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O3 epitaxial films and their crystal structure and electrical property characterizations.

Epitaxial (1-x)BaTiO3-xBi(Mg0.5Ti0.5)O3 films with x = 0 - 0.9 were grown on (111)cSrRuO3//(111)SrTiO3 substrates by pulsed laser deposition (PLD). Plotting the temperature where dielectric constant reaches a maximum {T[&eh;r(max.)]} versus Bi(Mg0.5,Ti0.5)O3 content present minimum at x = 0.1. On the other hand, the remanent polarization (Pr) and the effective transverse piezoelectric constant [d33(eff.)] showed minimum at 0.1 and 0.2, respectively, but increased with the increase of x in (1-x)BaTiO3-xBi(Mg0.5Ti0.5)O3 above these values. These results show the simultaneous increase of T[&eh;r(max.)] and d33(eff.) for the films above x = 0.2 that normally showed treads off characteristics. [ABSTRACT FROM AUTHOR]