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CVD silicon carbide electric heaters.

Authors :
Ivanova, L.
Demakov, K.
Shakhov, M.
Prokhorov, Yu.
Source :
Inorganic Materials; Jun2012, Vol. 48 Issue 6, p588-592, 5p, 1 Black and White Photograph, 4 Charts, 6 Graphs
Publication Year :
2012

Abstract

This paper describes the growth of tubular polycrystalline 3 C-SiC samples by chemical vapor deposition (CVD). The use of propionitrile as a precursor for nitrogen doping ensures the growth of polycrystalline 3 C-SiC layers with a 1000°C resistivity of 0.1-0.2 Ω cm and zero temperature coefficient of resistance. Such 3 C-SiC tubes can be used as silicon carbide electric heaters. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00201685
Volume :
48
Issue :
6
Database :
Complementary Index
Journal :
Inorganic Materials
Publication Type :
Academic Journal
Accession number :
74979066
Full Text :
https://doi.org/10.1134/S0020168512060040