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CVD silicon carbide electric heaters.
- Source :
- Inorganic Materials; Jun2012, Vol. 48 Issue 6, p588-592, 5p, 1 Black and White Photograph, 4 Charts, 6 Graphs
- Publication Year :
- 2012
-
Abstract
- This paper describes the growth of tubular polycrystalline 3 C-SiC samples by chemical vapor deposition (CVD). The use of propionitrile as a precursor for nitrogen doping ensures the growth of polycrystalline 3 C-SiC layers with a 1000°C resistivity of 0.1-0.2 Ω cm and zero temperature coefficient of resistance. Such 3 C-SiC tubes can be used as silicon carbide electric heaters. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00201685
- Volume :
- 48
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Inorganic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 74979066
- Full Text :
- https://doi.org/10.1134/S0020168512060040