Back to Search
Start Over
Metal–Oxide RRAM.
- Source :
- Proceedings of the IEEE; Jun2012, Vol. 100 Issue 6, p1951-1970, 20p
- Publication Year :
- 2012
-
Abstract
- In this paper, recent progress of binary metal–oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal–oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189219
- Volume :
- 100
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Proceedings of the IEEE
- Publication Type :
- Academic Journal
- Accession number :
- 75233662
- Full Text :
- https://doi.org/10.1109/JPROC.2012.2190369